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september 2014 docid025835 rev 2 1 / 16 this is preliminary information on a new product now in development or undergoing evaluation. detai ls are subject to change without notice. www.st.com STD52P3LLH6 p - channel 30 v, 0.01 typ., 52 a, stripfet? h6 power mosfet in a dpak package datasheet - preliminary data figure 1 : internal schematic diagram features order codes v dss r ds(on) max i d p tot STD52P3LLH6 30 v 0.012 ? 52 a 70 w ? very low on - resistance ? very low gate charge ? high avalanche ? low gate drive power loss applications ? switching applications description this device is a p - channel power mosfet developed using t he stripfet? h6 technology, with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order codes mark ing package packaging STD52P3LLH6 52p3llh6 dpak tape and reel for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
contents STD52P3LLH6 2 / 16 docid025835 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 dpak (to - 252) mechanical data ................................ .................... 10 5 packaging mechanical data ................................ .......................... 13 5.1 dpak (to - 252) tape and reel mechanical data .............................. 13 6 revision history ................................ ................................ ............ 15
STD52P3LLH6 electrical ratings docid025835 rev 2 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 30 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 52 a i d drain current (continuous) at t c = 100 c 37.5 a i dm (1) drain current (pulsed) 208 a p tot total dissipation at t c = 25 c 70 w t stg storage temperature - 55 to 175 c t j max. operating junction temperature 175 c notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 2.14 c/w for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
electrical characteristics STD52P3LLH6 4 / 16 docid025835 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: static symbol parameter test condi tions min. typ. max. unit v (br)dss drain - source breakdown v oltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current v gs = 0, v ds = 30 v v gs = 0, v ds = 30 v, tc = 125 c 1 a 10 a i gss gate body leakage current v gs = 20 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 26 a 0.01 0.012 ? v gs = 4.5 v, i d = 26 a 0.014 0.017 ? table 5: dynamic symbol parameter test conditions min . typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 3350 - pf c oss output capacitance - 414 - pf c rss reverse transfer capacitance - 287 - pf q g total gate charge v dd = 15 v, i d = 52 a v gs = 4.5 v (see figure 14: "gate charge test circuit" ) - 33 - nc q gs gate - source charge - 14 - nc q gd gate - drain charge - 11 - nc r g gate input resistance id = 0 gate bias = 0 test signal level = 20 mv f = 1mhz - 1.5 ? for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
STD52P3LLH6 electrical characteristics docid025835 rev 2 5 / 16 table 6: switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 24 v, i d = 15 a, r g = 4.7 ?, v gs = 10 v ( see figure 13: "switching times test circuit for resistive load" ) - 12.8 - ns t r rise time - 112 - ns t d(off) turn - off delay time - 61 - ns t f fall time - 45 - ns table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = 52 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 52 a, di/dt = 100 a/s, v dd = 24 v (see figure 15: "source - drain diode forward characteristics" ) - 25.2 ns q rr reverse recovery charge - 17.4 nc i rrm reverse recovery current - 1.4 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5% for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
electrical characteristics STD52P3LLH6 6 / 16 docid025835 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance gipg29082014 1 143m t r ds(on) 9.00 8.50 8.00 0 2 i d (a) (m ) 9.50 v gs =10v 10.00 10.50 1 1.00 4 6 8 10 1 1.50 gipg29082014 1 127m t v gs 6 4 2 0 0 40 q g (nc) (v) 8 60 10 v dd =15v i g =52 a 12 20 0.05 0.01 0.1 0.2 0.02 gipg280820141409m t i d 150 50 0 0 2 v ds (v) 4 (a) 6 7v v gs = 9,10v 100 200 8 3v 5v 8v 6v 4v
STD52P3LLH6 electrical characteristics docid025835 rev 2 7 / 16 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics gipg290820141351m t v gs(th) 0.9 0.7 0.6 0.4 -75 t j (c) (norm) 1 75 25 i d =250 a 0.5 0.8 1.1 -25 125 175 gipg290820141400m t r ds(on) 0.4 -75 t j (c) (norm) 75 25 0.6 0.8 1 1.2 1.4 v gs =10v 1.6 -25 125 175 c 3000 2000 1000 0 0 10 v ds (v) (pf) 5 ciss coss crss 4000 15 20 25 gipg290820141342m t gipg290820141412m t v (br)dss -75 t j (c) (norm) 25 75 0.92 0.94 0.96 0.98 i d =1m a 1 1.02 -25 125 175 1.04 1.06 1.08
test circuits STD52P3LLH6 8 / 16 docid025835 rev 2 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : source - drain diode forward characteristics
STD52P3LLH6 package mechanical data docid025835 rev 2 9 / 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in differ ent grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STD52P3LLH6 10 / 1 6 docid025835 rev 2 4.1 dpak (to - 252) mechanical data figure 16 : dpak (to - 252) type a drawings
STD52P3LLH6 package mechanical data docid025835 rev 2 11 / 16 table 8: dpak (to - 252) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e 2.28 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r 0.20 v2 0 8
package mechanical data STD52P3LLH6 12 / 16 docid025835 rev 2 figure 17 : dpak (to - 252) type a footprint all dimensions are in mm
STD52P3LLH6 packaging mechanical data docid025835 rev 2 13 / 16 5 packaging mechanical data 5.1 dpak (to - 252) tape and reel mechanical data figure 18 : tape for dpak (to - 252)
packaging mechanical data STD52P3LLH6 14 / 1 6 docid025835 rev 2 figure 19 : reel for dpak (to - 252) table 9: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
STD52P3LLH6 revision history docid025835 rev 2 15 / 16 6 revision history table 10: document revision history date revision changes 02 - jun - 2014 1 first release 2 4 - sep - 2014 2 updated the title, the features and the description in cover page. updated table 2: "absolute maximum ratings" , section 2: "electrical characteristics" . added section 2.1: "electrical characteristics (curves)" . minor text changes.
STD52P3LLH6 16 / 16 docid025835 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics C all rights reserved

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